|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 11 of 35 found articles
| Title: |
Impact of Dual Material Gate Design and Retrograde Channel Doping on β-Ga2O3 MOSFET for High Power and RF Applications |
| Author: |
Goyal, Priyanshi Kaur, Harsupreet |
| Appeared in: |
SILICON |
| Paging: | Volume 15 () nr. 4 pages 1597-1608 |
| Year: |
2022-09-23 |
| Contents: | |
| Publisher: |
Springer Netherlands, Dordrecht |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 11 of 35 found articles
| << previous | next >> |