GaAs to Si Direct Wafer Bonding at T ≤ 220 °C in Ambient Air Via Nano-Bonding™ and Surface Energy Engineering (SEE)
Titel:
GaAs to Si Direct Wafer Bonding at T ≤ 220 °C in Ambient Air Via Nano-Bonding™ and Surface Energy Engineering (SEE)
Auteur:
Gurijala, Aashi R. Chow, Amber A. Khanna, Shaurya Suresh, Nikhil C. Penmatcha, Pranav V. Jandhyala, Siddarth V. Sahal, Mohammed Peng, Wesley Balasooriya, Thilina N. Ram, Sukesh Diaz, Timoteo Bertram, Michelle Cornejo, Christian E. Kavanagh, Karen L. Culbertson, Robert J. Herbots, Nicole