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                                       Details for article 35 of 81 found articles
 
 
  GaAs to Si Direct Wafer Bonding at T ≤ 220 °C in Ambient Air Via Nano-Bonding™ and Surface Energy Engineering (SEE)
 
 
Title: GaAs to Si Direct Wafer Bonding at T ≤ 220 °C in Ambient Air Via Nano-Bonding™ and Surface Energy Engineering (SEE)
Author: Gurijala, Aashi R.
Chow, Amber A.
Khanna, Shaurya
Suresh, Nikhil C.
Penmatcha, Pranav V.
Jandhyala, Siddarth V.
Sahal, Mohammed
Peng, Wesley
Balasooriya, Thilina N.
Ram, Sukesh
Diaz, Timoteo
Bertram, Michelle
Cornejo, Christian E.
Kavanagh, Karen L.
Culbertson, Robert J.
Herbots, Nicole
Appeared in: SILICON
Paging: Volume 14 () nr. 17 pages 11903-11926
Year: 2022-05-02
Contents:
Publisher: Springer Netherlands, Dordrecht
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 35 of 81 found articles
 
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