Characterization ofp-in-n ATLAS silicon microstrip detectors fabricated by Hamamatsu Photonics and irradiated with 24 GeV/c protons to 3 × 1014 pcm-2
Titel:
Characterization ofp-in-n ATLAS silicon microstrip detectors fabricated by Hamamatsu Photonics and irradiated with 24 GeV/c protons to 3 × 1014 pcm-2
Auteur:
Morgan, D. Buttar, C. M. Carter, J. R. Dawson, I. Hara, K. Harper, R. Iwata, Y. Kohriki, T. Kondo, T. Ohsugi, T. Robinson, D. Shimojima, M. Terada, S. Unno, Y.