|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 33 of 64 found articles
| Title: |
Impact of Copper-Doped Titanium Dioxide Interfacial Layers on the Interface-State and Electrical Properties of Si-based MOS Devices |
| Author: |
Akin, Seçkİn Sönmezoğlu, Savaş |
| Appeared in: |
Metallurgical and materials transactions. A, Physical metallurgy and materials science |
| Paging: | Volume 46 (2015) nr. 9 pages 4150-4159 |
| Year: |
2015 |
| Contents: | |
| Publisher: |
Springer US, New York |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 33 of 64 found articles
| << previous | next >> |