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                                       Details for article 30 of 67 found articles
 
 
  High rectification efficiency direct bandgap GePb quantum well trench N-MOSFET for 2.45G weak energy microwave wireless transmission
 
 
Title: High rectification efficiency direct bandgap GePb quantum well trench N-MOSFET for 2.45G weak energy microwave wireless transmission
Author: Sun, WenJie
Song, JianJun
Zhang, Zhe
Bi, SiHan
Appeared in: Applied physics. Part A, Materials science and processing
Paging: Volume 129 () nr. 7 pages xx
Year: 2023-06-03
Contents:
Publisher: Springer Berlin Heidelberg, Berlin/Heidelberg
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 30 of 67 found articles
 
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