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Details for article 8 of 9 found articles
| Title: |
Nonvolatile memory cells based on the effect of resistive switching in depth-graded ternary HfxAl1 − xOy oxide films |
| Author: |
Orlov, O. M. Chuprik, A. A. Baturin, A. S. Gornev, E. S. Bulakh, K. V. Egorov, K. V. Kuzin, A. A. Negrov, D. V. Zaitsev, S. A. Markeev, A. M. Lebedinskii, Yu. Yu. Zablotskii, A. V. |
| Appeared in: |
Russian microelectronics |
| Paging: | Volume 43 (2014) nr. 4 pages 239-245 |
| Year: |
2014 |
| Contents: | |
| Publisher: |
Pleiades Publishing, Moscow |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 8 of 9 found articles
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