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Journal description
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Details for article 4 of 22 found articles
| Title: |
Characterization of Selectively Doped InAs-Quantum-Dot GaAs-Based Multilayer Heterostructures by High-Resolution X-ray Diffraction |
| Author: |
Pashaev, E. M. Yakunin, S. N. Zaitsev, A. A. Mokerov, V. G. Fedorov, Yu. V. Imamov, R. M. |
| Appeared in: |
Russian microelectronics |
| Paging: | Volume 31 (2002) nr. 5 pages 310-317 |
| Year: |
2002 |
| Contents: | |
| Publisher: |
Kluwer Academic Publishers-Plenum Publishers, New York |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 4 of 22 found articles
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