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Journal description
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Details for article 3 of 22 found articles
| Title: |
Characterization of Selectively Doped InAs-Quantum-Dot GaAs-Based Multilayer Heterostructures by High-Resolution X-ray Diffraction |
| Author: |
E. M. Pashaev S. N. Yakunin A. A. Zaitsev V. G. Mokerov Yu. V. Fedorov R. M. Imamov |
| Appeared in: |
Russian microelectronics |
| Paging: | Volume 31 (2002) nr. 5 pages 8 p. |
| Year: |
2002-09/10-/10 |
| Contents: | |
| Publisher: |
Kluwer Academic/Plenum Publishers, New York, U.S.A. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 3 of 22 found articles
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