Electrical transport mechanisms of Neodymium-doped rare-earth semiconductors
Titel:
Electrical transport mechanisms of Neodymium-doped rare-earth semiconductors
Auteur:
Vaz, Isabela C. F. Macchi, Carlos Eugenio Somoza, Alberto Rocha, Leandro S. R. Longo, Elson Cabral, Luis da Silva, Edison Z. Simões, Alexandre Zirpoli Zonta, Giulia Malagù, Cesare Desimone, P. Mariela Ponce, Miguel Adolfo Moura, Francisco
Verschenen in:
Journal of materials science. Materials in electronics