Digital Library
Close Browse articles from a journal
 
<< previous    next >>
     Journal description
       All volumes of the corresponding journal
         All issues of the corresponding volume
           All articles of the corresponding issues
                                       Details for article 176 of 199 found articles
 
 
  Temperature dependence of THz emission and junction electric field of GaAs–AlGaAs modulation-doped heterostructures with different i-AlGaAs spacer layer thicknesses
 
 
Title: Temperature dependence of THz emission and junction electric field of GaAs–AlGaAs modulation-doped heterostructures with different i-AlGaAs spacer layer thicknesses
Author: Bardolaza, Hannah R.
Vasquez, John Daniel E.
Bacaoco, Miguel Y.
de los Reyes, Alexander E.
Lopez, Lorenzo P.
Somintac, Armando S.
Salvador, Arnel A.
Estacio, Elmer S.
Sarmago, Roland V.
Appeared in: Journal of materials science. Materials in electronics
Paging: Volume 29 (2018) nr. 10 pages 8760-8766
Year: 2018
Contents:
Publisher: Springer US, New York
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 176 of 199 found articles
 
<< previous    next >>
 
 Koninklijke Bibliotheek - National Library of the Netherlands