Temperature dependence of THz emission and junction electric field of GaAs–AlGaAs modulation-doped heterostructures with different i-AlGaAs spacer layer thicknesses
Title:
Temperature dependence of THz emission and junction electric field of GaAs–AlGaAs modulation-doped heterostructures with different i-AlGaAs spacer layer thicknesses
Author:
Bardolaza, Hannah R. Vasquez, John Daniel E. Bacaoco, Miguel Y. de los Reyes, Alexander E. Lopez, Lorenzo P. Somintac, Armando S. Salvador, Arnel A. Estacio, Elmer S. Sarmago, Roland V.
Appeared in:
Journal of materials science. Materials in electronics