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The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET |
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Titel: |
The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET |
Auteur: |
Yang, Fan Yao, Yao He, Zhiyuan Zhou, Guilin Zheng, Yue He, Liang Zhang, Jincheng Ni, Yiqiang Zhou, Deqiu Shen, Zhen Zhong, Jian Wu, Zhisheng Zhang, Baijun Liu, Yang |
Verschenen in: |
Journal of materials science. Materials in electronics |
Paginering: |
Jaargang 26 (2015) nr. 12 pagina's 9753-9758 |
Jaar: |
2015 |
Inhoud: |
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Uitgever: |
Springer US, New York |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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