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Journal description
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Details for article 33 of 34 found articles
| Title: |
Strain effects in SiN-passivated GaN-based HEMT devices |
| Author: |
Sacconi, Fabio Povolotskyi, Michael Carlo, Aldo Di |
| Appeared in: |
Journal of computational electronics |
| Paging: | Volume 5 (2006) nr. 2-3 pages 115-118 |
| Year: |
2006 |
| Contents: | |
| Publisher: |
Kluwer Academic Publishers, Boston |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 33 of 34 found articles
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