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                                       Details for article 32 of 34 found articles
 
 
  Simulation of the gate tunnel current in the double gate (DG) MOS transistor
 
 
Title: Simulation of the gate tunnel current in the double gate (DG) MOS transistor
Author: Majkusiak, B.
Walczak, J.
Appeared in: Journal of computational electronics
Paging: Volume 5 (2006) nr. 2-3 pages 143-148
Year: 2006
Contents:
Publisher: Kluwer Academic Publishers, Boston
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 32 of 34 found articles
 
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