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A 600 V high voltage gate driver IC with excellent allowable negative VS bias capability for E-mode GaN power devices |
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Titel: |
A 600 V high voltage gate driver IC with excellent allowable negative VS bias capability for E-mode GaN power devices |
Auteur: |
Lu, Yangyang Zhu, Jing Hu, Kongsheng Yu, Siyuan Yan, Ding Cheng, Chuanyi Luo, Cui Zhang, Yunwu Sun, Weifeng |
Verschenen in: |
Analog integrated circuits and signal processing |
Paginering: |
Jaargang 104 () nr. 1 pagina's 27-36 |
Jaar: |
2019-09-09 |
Inhoud: |
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Uitgever: |
Springer US, New York |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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