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                                       Details for article 5 of 10 found articles
 
 
  A 600 V high voltage gate driver IC with excellent allowable negative VS bias capability for E-mode GaN power devices
 
 
Title: A 600 V high voltage gate driver IC with excellent allowable negative VS bias capability for E-mode GaN power devices
Author: Lu, Yangyang
Zhu, Jing
Hu, Kongsheng
Yu, Siyuan
Yan, Ding
Cheng, Chuanyi
Luo, Cui
Zhang, Yunwu
Sun, Weifeng
Appeared in: Analog integrated circuits and signal processing
Paging: Volume 104 () nr. 1 pages 27-36
Year: 2019-09-09
Contents:
Publisher: Springer US, New York
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 5 of 10 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands