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A 600 V high voltage gate driver IC with excellent allowable negative VS bias capability for E-mode GaN power devices |
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Title: |
A 600 V high voltage gate driver IC with excellent allowable negative VS bias capability for E-mode GaN power devices |
Author: |
Lu, Yangyang Zhu, Jing Hu, Kongsheng Yu, Siyuan Yan, Ding Cheng, Chuanyi Luo, Cui Zhang, Yunwu Sun, Weifeng |
Appeared in: |
Analog integrated circuits and signal processing |
Paging: |
Volume 104 () nr. 1 pages 27-36 |
Year: |
2019-09-09 |
Contents: |
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Publisher: |
Springer US, New York |
Source file: |
Elektronische Wetenschappelijke Tijdschriften |
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