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Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 6 of 11 found articles
| Title: |
Investigation on safe-operating-area degradation and failure modes of SiC MOSFETs under repetitive short-circuit conditions |
| Author: |
Zhang, Ziyang Liang, Lin Fei, Haoyang |
| Appeared in: |
Power electronic devices and components |
| Paging: | Volume 4 () nr. C pages p. |
| Year: |
2023 |
| Contents: | |
| Publisher: |
The Authors |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 6 of 11 found articles
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