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Journal description
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Details for article 5 of 11 found articles
| Title: |
Impact of post-deposition anneal on ALD Al2O3/etched GaN interface for gate-first MOSc-HEMT |
| Author: |
Fernandes Paes Pinto Rocha, P. Vauche, L. Mohamad, B. Vandendaele, W. Martinez, E. Veillerot, M. Spelta, T. Rochat, N. Gwoziecki, R. Salem, B. Sousa, V. |
| Appeared in: |
Power electronic devices and components |
| Paging: | Volume 4 () nr. C pages p. |
| Year: |
2023 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 5 of 11 found articles
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