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Journal description
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Details for article 47 of 65 found articles
| Title: |
Origin of Double-Rhombic Single Shockley Stacking Faults in 4H-SiC Epitaxial Layers |
| Author: |
Nishio, Johji Ota, Chiharu Iijima, Ryosuke |
| Appeared in: |
Journal of electronic materials |
| Paging: | Volume 52 () nr. 1 pages 679-690 |
| Year: |
2022-10-31 |
| Contents: | |
| Publisher: |
Springer US, New York |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 47 of 65 found articles
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