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Details for article 33 of 46 found articles
| Title: |
Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an Electron Beam System |
| Author: |
Shao, Qinghui Jarrell, Joshua T. Murphy, John M. Frye, Clint D. Henderson, Roger A. Stoyer, Mark A. Voss, Lars F. Nikolic, Rebecca J. |
| Appeared in: |
Journal of electronic materials |
| Paging: | Volume 51 () nr. 1 pages 350-355 |
| Year: |
2021-11-10 |
| Contents: | |
| Publisher: |
Springer US, New York |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 33 of 46 found articles
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