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                                       Details for article 11 of 22 found articles
 
 
  Effects of Thermal Annealing on the Formation of Buried β-SiC by Ion Implantation
 
 
Title: Effects of Thermal Annealing on the Formation of Buried β-SiC by Ion Implantation
Author: Poudel, P. R.
Rout, B.
Diercks, D. R.
Paramo, J. A.
Strzhemechny, Y. M.
Mcdaniel, F. D.
Appeared in: Journal of electronic materials
Paging: Volume 40 (2011) nr. 9 pages 1998-2003
Year: 2011
Contents:
Publisher: Springer US, Boston
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 11 of 22 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands