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                                       Details for article 2 of 52 found articles
 
 
  An Initial Investigation of Nitrogen Doping of Wide-Bandgap HgCdTe During Molecular-Beam Epitaxy Using Ar/N Plasmas
 
 
Title: An Initial Investigation of Nitrogen Doping of Wide-Bandgap HgCdTe During Molecular-Beam Epitaxy Using Ar/N Plasmas
Author: Lyon, T.J. de
Rajavel, R.D.
Hunter, A.T.
Jensen, J.E.
Jack, M.D.
Bailey, S.L.
Kvaas, R.E.
Randall, V.K.
Johnson, S.M.
Appeared in: Journal of electronic materials
Paging: Volume 37 (2008) nr. 9 pages 1420-1425
Year: 2008
Contents:
Publisher: Springer US, Boston
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 2 of 52 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands