|
Use of negative capacitance to simulate the electrical characteristics in double-gate ferroelectric field-effect transistors |
|
|
|
Title: |
Use of negative capacitance to simulate the electrical characteristics in double-gate ferroelectric field-effect transistors |
Author: |
Xiao, Y.G. Tang, M.H. Xiong, Y. Li, J.C. Cheng, C.P. Jiang, B. Cai, H.Q. Tang, Z.H. Lv, X.S. Gu, X.C. Zhou, Y.C. |
Appeared in: |
Current applied physics |
Paging: |
Volume 12 (2012) nr. 6 pages 5 p. |
Year: |
2012 |
Contents: |
|
Publisher: |
Elsevier B.V. |
Source file: |
Elektronische Wetenschappelijke Tijdschriften |
|
|
|
|