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                                       Details for article 3 of 47 found articles
 
 
  A novel 4H–SiC MESFET with P-type doping zone and recessed buffer layer
 
 
Title: A novel 4H–SiC MESFET with P-type doping zone and recessed buffer layer
Author: Jia, Hujun
Zhang, Yunfan
Zhu, Shunwei
Wang, Huan
Wang, Xiaoyu
Liang, Hua
Yang, Yintang
Appeared in: Materials science in semiconductor processing
Paging: Volume 144 () nr. C pages p.
Year: 2022
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 3 of 47 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands