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Charge trapping effect in HfO2-based high-k gate dielectric stacks after heavy ion irradiation: The role of oxygen vacancy |
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Titel: |
Charge trapping effect in HfO2-based high-k gate dielectric stacks after heavy ion irradiation: The role of oxygen vacancy |
Auteur: |
Li, Zongzhen Liu, Tianqi Bi, Jinshun Yao, Huijun Zhang, Zhenxing Zhang, Shengxia Liu, Jiande Zhai, Pengfei Liu, Jie |
Verschenen in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
Paginering: |
Jaargang 459 () nr. C pagina's 143-147 |
Jaar: |
2019 |
Inhoud: |
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Uitgever: |
Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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