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Charge trapping effect in HfO2-based high-k gate dielectric stacks after heavy ion irradiation: The role of oxygen vacancy |
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Title: |
Charge trapping effect in HfO2-based high-k gate dielectric stacks after heavy ion irradiation: The role of oxygen vacancy |
Author: |
Li, Zongzhen Liu, Tianqi Bi, Jinshun Yao, Huijun Zhang, Zhenxing Zhang, Shengxia Liu, Jiande Zhai, Pengfei Liu, Jie |
Appeared in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
Paging: |
Volume 459 () nr. C pages 143-147 |
Year: |
2019 |
Contents: |
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Publisher: |
Elsevier B.V. |
Source file: |
Elektronische Wetenschappelijke Tijdschriften |
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