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Influence of highly-charged 209Bi33+ irradiation on structure and optoelectric characteristics of GaN epilayer |
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Titel: |
Influence of highly-charged 209Bi33+ irradiation on structure and optoelectric characteristics of GaN epilayer |
Auteur: |
Zhang, L.Q. Zhang, C.H. Xu, C.L. Li, J.J. Yang, Y.T. Ma, Y.Z. Li, J.Y. Liu, H.P. Ding, Z.N. Yan, T.X. Song, Y. |
Verschenen in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
Paginering: |
Jaargang 406 (2017) nr. PB pagina's 571-577 |
Jaar: |
2017 |
Inhoud: |
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Uitgever: |
Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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