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Accurate depth profiling of oxidized SiGe (intrinsic or doped) thin films by extended Full Spectrum ToF-SIMS |
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Titel: |
Accurate depth profiling of oxidized SiGe (intrinsic or doped) thin films by extended Full Spectrum ToF-SIMS |
Auteur: |
Py, M. Saracco, E. Damlencourt, J.F. Colonna, J.P. Martinez, E. Delaye, V. Fabbri, J.M. Barnes, J.P. Hartmann, J.M. |
Verschenen in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
Paginering: |
Jaargang 273 (2012) nr. C pagina's 4 p. |
Jaar: |
2012 |
Inhoud: |
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Uitgever: |
Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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