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                                       Details for article 1 of 76 found articles
 
 
  Accurate depth profiling of oxidized SiGe (intrinsic or doped) thin films by extended Full Spectrum ToF-SIMS
 
 
Title: Accurate depth profiling of oxidized SiGe (intrinsic or doped) thin films by extended Full Spectrum ToF-SIMS
Author: Py, M.
Saracco, E.
Damlencourt, J.F.
Colonna, J.P.
Martinez, E.
Delaye, V.
Fabbri, J.M.
Barnes, J.P.
Hartmann, J.M.
Appeared in: Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms
Paging: Volume 273 (2012) nr. C pages 4 p.
Year: 2012
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

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