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Accurate depth profiling of oxidized SiGe (intrinsic or doped) thin films by extended Full Spectrum ToF-SIMS |
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Title: |
Accurate depth profiling of oxidized SiGe (intrinsic or doped) thin films by extended Full Spectrum ToF-SIMS |
Author: |
Py, M. Saracco, E. Damlencourt, J.F. Colonna, J.P. Martinez, E. Delaye, V. Fabbri, J.M. Barnes, J.P. Hartmann, J.M. |
Appeared in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
Paging: |
Volume 273 (2012) nr. C pages 4 p. |
Year: |
2012 |
Contents: |
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Publisher: |
Elsevier B.V. |
Source file: |
Elektronische Wetenschappelijke Tijdschriften |
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