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Details for article 106 of 194 found articles
| Title: |
Ion-cut of Si facilitated by interfacial defects of Si substrate/epitaxial layer grown by molecular-beam epitaxy |
| Author: |
Shao, Lin Lee, J.K. Höchbauer, T. Nastasi, M. Thompson, Phillip E. Rusakova, I. Seo, H.W. Chen, Q.Y. Liu, J.R. Chu, Wei-Kan |
| Appeared in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
| Paging: | Volume 242 (2006) nr. 1-2 pages 3 p. |
| Year: |
2006 |
| Contents: | |
| Publisher: |
Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 106 of 194 found articles
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