Etched ion tracks in silicon oxide and silicon oxynitride as charge injection or extraction channels for novel electronic structures
Titel:
Etched ion tracks in silicon oxide and silicon oxynitride as charge injection or extraction channels for novel electronic structures
Auteur:
Fink, D. Petrov, A.V. Hoppe, K. Fahrner, W.R. Papaleo, R.M. Berdinsky, A.S. Chandra, A. Chemseddine, A. Zrineh, A. Biswas, A. Faupel, F. Chadderton, L.T.
Verschenen in:
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms