Ion beam induced modification of lattice strains in In0.1Ga0.9As/GaAs system
Titel:
Ion beam induced modification of lattice strains in In0.1Ga0.9As/GaAs system
Auteur:
Nageswara Rao, S.V.S. Rajam, A.K. Siddiqui, Azher M. Avasthi, D.K. Srinivasan, T. Tiwari, Umesh Mehta, S.K. Muralidharan, R. Jain, R.K. Pathak, Anand P.
Verschenen in:
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms