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Journal description
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Details for article 18 of 18 found articles
| Title: |
The effect of the undoped GaN/buffer-layer interface on the operation of Schottky diodes and MESFET devices |
| Author: |
Noor Elahi, Asim M. Atalla, Mahmoud R.M. Mo, Chen Zhang, Wenjun Liu, Shengshi Zhang, Zhifang Jiang, Zhenyu Liu, Jie Sun, Xiaowei Chang, Min Zhang, Xuedian Hsu, Jian |
| Appeared in: |
Microelectronic engineering |
| Paging: | Volume 214 (2019) nr. C pages 38-43 |
| Year: |
2019 |
| Contents: | |
| Publisher: |
Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 18 of 18 found articles
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