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Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfOx RRAM devices |
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Titel: |
Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfOx RRAM devices |
Auteur: |
Zhong, Chia-Wen Tzeng, Wen-Hsien Liu, Kou-Chen Lin, Horng-Chih Chang, Kow-Ming Chan, Yi-Chun Kuo, Chun-Chih Chen, Pang-Shiu Lee, Heng-Yuan Chen, Frederick Tsai, Ming-Jinn |
Verschenen in: |
Surface & coatings technology |
Paginering: |
Jaargang 231 (2013) nr. C pagina's 4 p. |
Jaar: |
2013 |
Inhoud: |
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Uitgever: |
Published by Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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