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Stacked gate-all-around nanosheet transistors with full-air-spacers for reducing parasitic capacitance to improve device and circuit performance |
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Title: |
Stacked gate-all-around nanosheet transistors with full-air-spacers for reducing parasitic capacitance to improve device and circuit performance |
Author: |
Li, Lianlian Cao, Lei Zhang, Xuexiang Li, Qingkun Wu, Zhenhua Zhang, Meihe Bao, Yunjiao Wang, Peng Jiang, Renjie Du, Anyan Zhang, Qingzhu Yin, Huaxiang |
Appeared in: |
Microelectronics journal |
Paging: |
Volume 156 () nr. C pages p. |
Year: |
2025 |
Contents: |
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Publisher: |
Elsevier Ltd |
Source file: |
Elektronische Wetenschappelijke Tijdschriften |
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