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                                       Details for article 52 of 56 found articles
 
 
  Stacked gate-all-around nanosheet transistors with full-air-spacers for reducing parasitic capacitance to improve device and circuit performance
 
 
Title: Stacked gate-all-around nanosheet transistors with full-air-spacers for reducing parasitic capacitance to improve device and circuit performance
Author: Li, Lianlian
Cao, Lei
Zhang, Xuexiang
Li, Qingkun
Wu, Zhenhua
Zhang, Meihe
Bao, Yunjiao
Wang, Peng
Jiang, Renjie
Du, Anyan
Zhang, Qingzhu
Yin, Huaxiang
Appeared in: Microelectronics journal
Paging: Volume 156 () nr. C pages p.
Year: 2025
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 52 of 56 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands