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                                       Details for article 24 of 46 found articles
 
 
  Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices
 
 
Title: Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices
Author: Ma, Teng
Yu, Xuefeng
Cui, Jiangwei
Zheng, Qiwen
Zhou, Hang
Su, Dandan
Guo, Qi
Appeared in: Microelectronics reliability
Paging: Volume 81 (2018) nr. C pages 112-116
Year: 2018
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 24 of 46 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands