Corrigendum to “A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors” [Microelectron. Reliab. 60 (2016) 67–69]
Titel:
Corrigendum to “A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors” [Microelectron. Reliab. 60 (2016) 67–69]
Auteur:
Wang, Weiliang Khan, Karim Zhang, Xingye Qin, Haiming Jiang, Jun Miao, Lijing Jiang, Kemin Wang, Pengjun Dai, Mingzhi Chu, Junhao