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                                       Details for article 6 of 24 found articles
 
 
  Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness
 
 
Title: Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness
Author: Poliakov, Pavel
Blomme, Pieter
Corbalan, Miguel Miranda
Houdt, Jan Van
Dehaene, Wim
Appeared in: Microelectronics reliability
Paging: Volume 51 (2011) nr. 5 pages 6 p.
Year: 2011
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 6 of 24 found articles
 
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