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                                       Details for article 6 of 37 found articles
 
 
  Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4–3 nm)
 
 
Title: Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4–3 nm)
Author: Clerc, R.
Spinelli, A.S.
Ghibaudo, G.
Leroux, C.
Pananakakis, G.
Appeared in: Microelectronics reliability
Paging: Volume 41 (2001) nr. 7 pages 4 p.
Year: 2001
Contents:
Publisher: Elsevier Science Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 6 of 37 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands