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                                       Details for article 4 of 21 found articles
 
 
  An insulated gate bipolar transistor employing the plugged n+ anode
 
 
Title: An insulated gate bipolar transistor employing the plugged n+ anode
Author: Chun, J.H
Lee, B.H
Byeon, D.S
Kim, D.Y
Han, M.K
Choi, Y.I
Appeared in: Microelectronics reliability
Paging: Volume 39 (1999) nr. 1 pages 5 p.
Year: 1999
Contents:
Publisher: Elsevier Science Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 4 of 21 found articles
 
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