Reading reliability analysis and modeling in 1S1R devices based on Phase-Change Memory and Ovonic Threshold Switching selector integrated in a double-patterned self-aligned structure
Titel:
Reading reliability analysis and modeling in 1S1R devices based on Phase-Change Memory and Ovonic Threshold Switching selector integrated in a double-patterned self-aligned structure
Auteur:
Antonelli, Renzo De Camaret, C. Bourgeois, G. Saghi, Z. Monniez, T. Martin, S. Castellani, N. Bernard, M. Fellouh, L. Salvi, A. Gout, S. Andrieu, F. Souifi, A. Navarro, G.