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Journal description
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Details for article 13 of 18 found articles
| Title: |
Study on single-event burnout hardening with reduction of hole current density by top polysilicon diode of SOI LDMOS based on TCAD simulations |
| Author: |
Niu, Wenze Dai, Hongli Wang, Luoxin Xue, Yuming Lyu, Haitao Guo, Jinjun |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 163 () nr. C pages p. |
| Year: |
2024 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 13 of 18 found articles
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