Digital Library
Close Browse articles from a journal
 
<< previous    next >>
     Journal description
       All volumes of the corresponding journal
         All issues of the corresponding volume
           All articles of the corresponding issues
                                       Details for article 6 of 16 found articles
 
 
  Enhanced gate biasing resilience in asymmetric and double trench SiC MOSFETs towards generalized highly reliable power electronics
 
 
Title: Enhanced gate biasing resilience in asymmetric and double trench SiC MOSFETs towards generalized highly reliable power electronics
Author: Wang, Dandan
Zhang, Yifan
Wang, Ruolan
Tang, Ruifeng
Wang, Kuan
Wang, Di
Liu, Long
Yan, Feng
Zhang, Songsong
Shen, Andy
Mai, Zhihong
Xing, Guozhong
Appeared in: Microelectronics reliability
Paging: Volume 154 () nr. C pages p.
Year: 2024
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 6 of 16 found articles
 
<< previous    next >>
 
 Koninklijke Bibliotheek - National Library of the Netherlands