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Enhanced gate biasing resilience in asymmetric and double trench SiC MOSFETs towards generalized highly reliable power electronics |
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Title: |
Enhanced gate biasing resilience in asymmetric and double trench SiC MOSFETs towards generalized highly reliable power electronics |
Author: |
Wang, Dandan Zhang, Yifan Wang, Ruolan Tang, Ruifeng Wang, Kuan Wang, Di Liu, Long Yan, Feng Zhang, Songsong Shen, Andy Mai, Zhihong Xing, Guozhong |
Appeared in: |
Microelectronics reliability |
Paging: |
Volume 154 () nr. C pages p. |
Year: |
2024 |
Contents: |
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Publisher: |
Elsevier Ltd |
Source file: |
Elektronische Wetenschappelijke Tijdschriften |
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