Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability
Titel:
Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability
Auteur:
Putcha, Vamsi Franco, Jacopo Vais, Abhitosh Kaczer, Ben Xie, Qi Maes, Jan Willem Tang, Fu Givens, Michael Collaert, Nadine Linten, Dimitri Groeseneken, Guido