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Journal description
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Details for article 2 of 12 found articles
| Title: |
An ion beam layer removal method of determining the residual stress in the as-fabricated TSV-Cu/TiW/SiO2/Si interface on a nanoscale |
| Author: |
Chen, S. En, Y.F. Li, G.Y. Wang, Z.Z. Gao, R. Ma, Rui Zhang, L.X. Huang, Y. |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 112 () nr. C pages p. |
| Year: |
2020 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 2 of 12 found articles
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