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                                       Details for article 22 of 24 found articles
 
 
  Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment
 
 
Title: Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment
Author: Malagón, Daniel
Torrens, Gabriel
Segura, Jaume
Bota, Sebastià A.
Appeared in: Microelectronics reliability
Paging: Volume 110 () nr. C pages p.
Year: 2020
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 22 of 24 found articles
 
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