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Journal description
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Details for article 262 of 2999 found articles
| Title: |
An improved reliability model for Si and GaN power FET |
| Author: |
Golan, Gady Azoulay, Moshe Avraham, Tsuriel Kremenetsky, Ilan Bernstein, Joseph B. |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 81 (2018) nr. C pages 77-89 |
| Year: |
2018 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 262 of 2999 found articles
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