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                                       Details for article 18 of 26 found articles
 
 
  High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications
 
 
Title: High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications
Author: Zhou, Qi
Yang, Shu
Chen, Wanjun
Zhang, Bo
Feng, Zhihong
Cai, Shujun
Chen, Kevin J.
Appeared in: Solid-state electronics
Paging: Volume 91 (2014) nr. C pages 5 p.
Year: 2014
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 18 of 26 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands