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                                       Details for article 17 of 26 found articles
 
 
  Experimental study of back gate bias effect and short channel effect in ultra-thin buried oxide tri-gate nanowire MOSFETs
 
 
Title: Experimental study of back gate bias effect and short channel effect in ultra-thin buried oxide tri-gate nanowire MOSFETs
Author: Ota, K.
Saitoh, M.
Tanaka, C.
Numata, T.
Appeared in: Solid-state electronics
Paging: Volume 91 (2014) nr. C pages 4 p.
Year: 2014
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 17 of 26 found articles
 
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