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                                       Details for article 21 of 74 found articles
 
 
  Characterizing damage to ONO dielectrics induced during programming SONOS/NROMTM non-volatile semiconductor memory (NVSM) devices
 
 
Title: Characterizing damage to ONO dielectrics induced during programming SONOS/NROMTM non-volatile semiconductor memory (NVSM) devices
Author: Wrazien, Stephen J.
Wang, Yu
Khan, Bilal M.
White, Marvin H.
Appeared in: Solid-state electronics
Paging: Volume 48 (2004) nr. 10-11 pages 5 p.
Year: 2004
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 21 of 74 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands